Description
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
Book Information
ISBN 9780367574369
Author Yue Hao
Format Paperback
Page Count 392
Imprint CRC Press
Publisher Taylor & Francis Ltd
Weight(grams) 730g