Description
Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: * Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials * All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework * Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Provides the theoretical background and the physical insight needed to understand new and future developments in nanoscale CMOS technologies.
About the Author
David Esseni is an Associate Professor of Electronics at the University of Udine, Italy. Pierpaolo Palestri is an Associate Professor of Electronics at the University of Udine, Italy. Luca Selmi is a Professor of Electronics at the University of Udine, Italy.
Reviews
'In this comprehensive text, physicists and electrical engineers will find a thorough treatment of semiclassical carrier transport in the context of nanoscale MOSFETs. With only a very basic background in mathematics, physics, and electronic devices, the authors lead readers to a state-of-the-art understanding of the advanced transport physics and simulation methods used to describe modern transistors.' Mark Lundstrom, Purdue University
'This is the most pedagogical and comprehensive book in the field of CMOS device physics I have ever seen.' Thomas Skotnicki, STMicroelectronics
'This is a modern and rigorous treatment of transport in advanced CMOS devices. The detailed and complete description of the models and the simulation techniques makes the book fully self sufficient.' Asen Asenov, University of Glasgow
Book Information
ISBN 9780521516846
Author David Esseni
Format Hardback
Page Count 488
Imprint Cambridge University Press
Publisher Cambridge University Press
Weight(grams) 1100g
Dimensions(mm) 254mm * 182mm * 25mm
Provides the theoretical background and the physical insight needed to understand new and future developments in nanoscale CMOS technologies.
About the Author
David Esseni is an Associate Professor of Electronics at the University of Udine, Italy. Pierpaolo Palestri is an Associate Professor of Electronics at the University of Udine, Italy. Luca Selmi is a Professor of Electronics at the University of Udine, Italy.
Reviews
'In this comprehensive text, physicists and electrical engineers will find a thorough treatment of semiclassical carrier transport in the context of nanoscale MOSFETs. With only a very basic background in mathematics, physics, and electronic devices, the authors lead readers to a state-of-the-art understanding of the advanced transport physics and simulation methods used to describe modern transistors.' Mark Lundstrom, Purdue University
'This is the most pedagogical and comprehensive book in the field of CMOS device physics I have ever seen.' Thomas Skotnicki, STMicroelectronics
'This is a modern and rigorous treatment of transport in advanced CMOS devices. The detailed and complete description of the models and the simulation techniques makes the book fully self sufficient.' Asen Asenov, University of Glasgow
Book Information
ISBN 9780521516846
Author David Esseni
Format Hardback
Page Count 488
Imprint Cambridge University Press
Publisher Cambridge University Press
Weight(grams) 1100g
Dimensions(mm) 254mm * 182mm * 25mm
