Materials Fundamentals of Molecular Beam Epitaxy by Jeffrey Y. Tsao 9780127016252

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The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE.

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ISBN 9780127016252
Author Jeffrey Y. Tsao
Format Paperback
Page Count 301
Imprint Academic Press Inc
Publisher Elsevier Science Publishing Co Inc
Weight(grams) 540g

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