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Gas Source Molecular Beam Epitaxy: Growth and Properties of Phosphorus Containing III-V Heterostructures by M.B. Panish 9783642781292

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9783642781292
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Description

The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and the use of active devices for materials evaluation is shown in detail.

Book Information
ISBN 9783642781292
Author M.B. Panish
Format Paperback
Page Count 428
Imprint Springer-Verlag Berlin and Heidelberg GmbH & Co. K
Publisher Springer-Verlag Berlin and Heidelberg GmbH & Co. KG
Weight(grams) 668g

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