Layered metal-insulator-semiconductor microstructures have become an important research area in semiconductor microelectronics. New devices utilize phenomena occuring at or near the semiconductor surface directly. This monograph provides a survey of the diverse experimental and theoretical results for electron and hole transport in surface and subsurface regions of semiconductors, with an emphasis on the mechanisms involved and special measurement procedures necessary, for example in Hall current measurements. This English edition has been substantially revised and updated from the original Russian edition.
Reviews
'for those researching smaller devices and new surface effects, it will be a valuable source book ... Ideas are clearly explained, and there is a plentiful supply of references for those wanting to go deeper into particular points, The book can be highly recommended for those working in the field.' David Northrop, International Journal of Electrical Engineering Education, Volume 29, Number 4,
'the book is a useful addition to those currently available in summarizing information which is important, although not fully relevant to much contemporary research' Professor M. Pepper, Toshiba Cambridge Research Centre Ltd, Contemporary Physics, Volume 33, Number 3, 1992



Book Information
ISBN 9780198520344
Author V. N. Dobrovolsky
Format Hardback
Page Count 232
Imprint Clarendon Press
Publisher Oxford University Press
Weight(grams) 500g
Dimensions(mm) 238mm * 162mm * 18mm